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MG800J2YS50A
MITSUBISHI IGBT Module
MG800J2YS50A
High power switching applications Motor control applications
* * * The electrodes are isolated from case. Enhancement-mode Thermal output terminal (TH)
Equivalent Circuit
TH1 TH2 C1
G1 Fo1 E1 E1/C2
G2 Fo2 E2 E2
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MG800J2YS50A
Package Dimensions
Unit: mm
Weight: 680 g (typ.)
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Maximum Ratings (Ta = 25C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Forward current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Isolation voltage Terminal: M8 Mounting: M5 DC DC Symbol VCES VGES IC IF PC Tj Tstg VIsol Rating 600 20 800 800 2900 150 -40~125 2500 (AC 1 min) 10 3 Unit V V A A W C C V N*m N*m
Screw torque
Electrical Characteristics (Ta = 25C)
Characteristics Gate Leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Gate-emitter voltage Gate resistance Symbol IGES ICES VGE (off) VCE (sat) Cies VGE RG td (on) tr Switching time ton td (off) tf toff Forward voltage VF IF = 800A, VGE = 0V Tj = 25C Tj = 125C Inductive load VCC = 300 V IC = 800 A VGE = 15 V RG = 4.7 (Note) Test Condition VGE = 20 V, VCE = 0 V VCE = 600 V, VGE = 0 V IC = 800 mA, VCE = 5 V IC = 800 A, VGE = 15 V Tj = 25C Tj = 125C Min 5.0 13 4.7 1600 Typ. 6.5 2.4 2.6 93000 15 0.3 0.25 0.55 0.85 0.15 1.05 2.3 2.1 Max 10 1 8.0 3.0 3.3 17 15 0.30 3.0 0.5 0.043 C/W 0.056 A V s s pF V Unit A mA V V
VCE = 10 V, VGE = 0 V, f = 1 MHz
Reverse recovery time
trr
IF = 800 A, VGE = -10 V di/dt = 2000 A/s Transistor stage
Thermal resistance RTC Operating current
Rth (j-c) Diode stage Irtc Tj = 25C
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Thermistor
Characteristics Zero power resistance B value Isolation voltage Symbol R25 R25/85 Tc = 25C Tc = 25C/Tc = 85C Tc = 25C Test Condition Min 2500 Typ. 100 4390 Max Unit k K Vrms
Note: Switching time measurement circuit and input/output waveforms
VGE RG -VGE VCC IC RG VCE 0 td (off) toff tf 10% 10% td (on) tr ton L IC 90% 90% 90% IF 0 10% trr
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IC - VCE
1800 1600 Common emitter Tj = 25C 20 15 12 1800 1600 Common emitter Tj = 125C
IC - VCE
20 15 12
IC (A)
1200 1000 10 800 600 400 200 0 0 9 VGE = 8 V 1 2 3 4 5
IC (A)
1400
1400 1200 10 1000 800 600 400 200 0 0 9
Collector current
Collector current
VGE = 8 V
1
2
3
4
5
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
VCE - VGE
12 12
VCE - VGE
(V)
Common emitter 10 Tj = 125C
(V)
Common emitter 10 Tj = 25C
VCE
8
VCE Collector-emitter voltage
8
Collector-emitter voltage
6
6
4 1600 800 2 IC = 400 A 0 0 4 8 12 16 20
4 800 2 IC = 400 A 0 0
1600
4
8
12
16
20
Gate-emitter voltage
VGE
(V)
Gate-emitter voltage
VGE
(V)
IC - VGE
1800 1600 Common emitter VCE = 5 V
IC (A) Collector current
1400 1200 1000 800 600 400 200 0 0
Tj = 125C
25
2
4
6
8
10
12
14
16
Gate-emitter voltage
VGE
(V)
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IF - VF
900 800 400
VCE, VGE - QG
16 14 VCE = 0 300 250 200 150 100 50 0 0 Common emitter RL = 0.375 Tj = 25C 300 100 12 10 200 8 6 4 2 0 4000
(V)
(A)
700 600 500 400 300 200 Common cathode 100 0 0 VGE = 0 V 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 125 Tj = 25C
Collector-emitter voltage VCE
Forward current IF
1000
2000
3000
Forward voltage
VF (V)
Charge
QG
(nC)
Switching time - RG
10000 Common emitter VCC = 300 V 5000 VGE = 15 V IC = 800 A 3000 10000
Switching time - RG
Common emitter VCC = 300 V 5000 VGE = 15 V IC = 800 A 3000
(s)
(mJ)
Tj = 25C Tj = 125C
Tj = 25C Tj = 125C
Switching time
toff 1000 td (off) 500 300 tr tf 100 2 4 6 8 10 12 14 16 td (on) ton
Switching time loss
Eon 1000 Eoff
500 300
100 2
4
6
8
10
12
14
16
Gate resistance
RG
()
Gate resistance
RG
()
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Gate-emitter voltage
VGE
(V)
350
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Switching time - IC
10000 100
Switching loss - IC
Eoff 50
(mJ)
(s)
toff 1000 td (on) ton td (on) tr 100 Common emitter VCC = 300 V VGE = 15 V RG = 4.7 100 200 300 400 500 600 tf
30
Eon
Switching time loss
Switching time
10
5 3 Common emitter VCC = 300 V VGE = 15 V RG = 4.7 1 0 100 200 300 400 500 600 Tj = 25C Tj = 125C 700 800 900
10 0
Tj = 25C Tj = 125C 700 800 900
Collector current IC (A)
Collector current IC (A)
trr, Irr - IF
1000 1000
Edsw - IF
Common cathode
Peak reverse recovery current Irr (A) Reverse recovery time trr (ns)
Edsw (mJ)
trr
di/dt = 2000 A/s VGE = -10 V VCC = 300 V 100 Tj = 25C Tj = 125C
100
Irr
10 Common cathode di/dt = 2000 A/s VGE = 15 V VCC = 300 V 1 0 200 400 600 Tj = 25C Tj = 125C 800
Reverse recovery loss
10
1 0
200
400
600
800
Forward current
IF (A)
Forward current
IF (A)
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C - VCE
1000000 1 Tc = 25C
Rth (t) - tw
100000
0.1 Ciss
(pF)
Diode stage Transistor stage
Capacitance
C
10000
0.01
Coss 1000 Common emitter VGE = 0 f = 1 MHz Tj = 25C 1 10 100 1000 Crss 0.001 0.001 0.01 0.1 1 10
Pulse width
tw
(s)
100 0
Collector-emitter voltage
VCE
(V)
Reverse bias SOA
10000 10000
Scsoa
IC (A)
1000
IC (A) Collector current
1000
Collector current
100
100
10 Tj < 125C = VGE = 15 V 1 0 RG = 4.7 200 400 600 800
10 Common emitter VCC = 300 V Tj < 125C = tw = 10 s 200 400 600 800
1 0
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
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VCE(sat)
Rank Symbol 21 22 23 24 25 26 27 28 29 30 Min. 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 Max. 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0

VF
Rank Symbol B C D E F G H Min. 1.5 1.7 1.9 2.1 2.3 2.5 2.7 Max. 1.8 2.0 2.2 2.4 2.6 2.8 3.0

MITSUBISHI MG800J2YS50A
23F22G 123456
Low side High side
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